Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs

IEEE Transactions on Nanotechnology

Volumn 2, Issue 3, 2003, Pages 181-185

  Clifford, Jason ^a   John, D L ^a   Pulfrey, David L ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Bipolar transistors; Carbon nanotube transistors; Field effect transistors (FETs); Nanotechnology; Quasi equilibrium analysis; Schottky barriers; Semiconductor device modeling

Indexed keywords

BACKSCATTERING; BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FERMI LEVEL; FIELD EFFECT TRANSISTORS; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBE TRANSISTORS; QUASI-EQUILIBRIUM ANALYSIS; SEMICONDUCTOR DEVICE MODELING;

CARBON NANOTUBES;

EID: 1242305766     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.817527     Document Type: Article

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