Investigation of the novel attributes of a carbon nanotube FET with high-κ gate dielectrics

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 10, 2008, Pages 3068-3071

  Arefinia, Zahra ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

Carbon nanotube; Field effect transistor; High ; Two dimensional (2 D) model

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); MOS CAPACITORS; MOSFET DEVICES; NANOCOMPOSITES; NANOPORES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; TRANSISTORS; TWO DIMENSIONAL;

A-CARBON; AVERAGE ELECTRON VELOCITY; CARBON NANOTUBE; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DIELECTRIC PERMITTIVITIES; FIELD-EFFECT TRANSISTOR; ON CURRENTS; POTENTIAL IMPACTS; SUB THRESHOLDS; TRANSISTOR PERFORMANCE; TWO-DIMENSIONAL (2-D) MODEL; TWO-DIMENSIONAL MODELING;

CARBON NANOTUBES;

EID: 50249086884     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.04.005     Document Type: Article

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