Quantum simulation study of a new carbon nanotube field-effect transistor with electrically induced source/drain extension

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 237-243

  Arefinia, Zahra ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

Carbon nanotube (CNT); Field effect transistor (FET); Induced source drain; Nonequilibrium Green's function (NEGF); Short channel effects (SCEs); Side gate

Indexed keywords

FIELD-EFFECT TRANSISTOR (FET); INDUCED SOURCE/DRAIN; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); SHORT-CHANNEL EFFECTS (SCES); SIDE GATE;

CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOS DEVICES; NANOSENSORS; QUANTUM CHEMISTRY; STRUCTURAL METALS;

GREEN'S FUNCTION;

EID: 67650281235     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2015458     Document Type: Article

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