Performance and design considerations of a novel dual-material gate carbon nanotube field-effect transistors: Nonequilibrium Green's function approach

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Arefinia, Zahra ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; GREEN'S FUNCTION; MOS DEVICES; NANOSENSORS; QUANTUM CHEMISTRY; TWO DIMENSIONAL;

2D POISSON; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; DESIGN CONSIDERATIONS; DINGER EQUATIONS; DRAIN CONDUCTANCES; GATE METALS; NEW STRUCTURES; NON-EQUILIBRIUM GREEN'S FUNCTIONS; OFF CURRENTS; QUANTUM SIMULATIONS; SELF-CONSISTENT SOLUTIONS; SHORT-CHANNEL EFFECTS; SOURCE AND DRAIN EXTENSIONS; UNIQUE FEATURES; VOLTAGE GAINS; WORK-FUNCTION;

FIELD EFFECT TRANSISTORS;

EID: 60849123768     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.024501     Document Type: Article

References (24)

1. H. Dai, A. Javey, E. Pop, D. Mann, W. Kim, and Y. Lu: NANO 1 (2006) 1.
2. J. Guo, S. Goasguen, M. Lundstrom, and S. Datta: Appl. Phys. Lett. 81 (2002) 1486.
3. J. Guo, M. Lundstrom, and S. Datta: Appl. Phys. Lett. 80 (2002) 3192.
4. L. C. Castro, D. L. John, and D. L. Pulfrey: Proc. SPIE 5276 (2004) 1.
5. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris: Phys. Rev, Lett. 89 (2002) 106801.
6. J. Chen, C. Klinke, A. Afzali, and P. Avouris: Appl. Phys. Lett. 86 (2005) 123108.
7. G. Fiori, G. Iannaccone, and G. Klimeck: IEDM Tech. Dig., 2005, p. 529.
8. A. Chaudhry and M. J. Kumar; IEEE Trans. Device Mater. Reliab. 4 (2004) 99.
9. W. Long, H. Ou, J.-M. Kuo, and K. K. Chin: IEEE Trans, Electron Devices 46 (1999) 865.
10. A. Chaudhry and M. J. Kumar: IEEE Trans. Electron Devices 51 (2004) 1463.
11. M. J. Kumar and G. V. Reddy: Jpn. J. Appl. Phys. 44 (2005) 6508.
12. G. V. Reddy and M. J. Kumar: IEEE Trans. Nanotechnol. 4 (2005) 260.
13. M. J. Kumar and A. Chaudhry: IEEE Trans. Electron Devices 51 (2004) 569.
14. M. J. Kumar, A. A. Orouji, and H. Dhakad: IEEE Trans. Electron Devices 53 (2006) 920.
15. J. Guo, S. Datta, M. Lundstrom, and M. P. Anantram: Int. J. Mulliscale Comput. Eng. 2 (2004) 257.
16. Z. Arefinia and A. A. Orouji: Physica E 40 (2008) 3068.
17. S. Datta: Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, U.K., 1995).
18. J. Guo, A. Javey, H. Dai, and M. Lundstrom: IEDM Tech. Dig., 2004, p. 703.
19. A. Svizhenko, M. P. Anantram, T. R. Govindam, and B. Biegel: J. Appl. Phys. 91 (2002) 2343.
20. X. Zhou, K. Y. Lim, and D. Lim: IEEE Trans. Electron Devices 46 (1999) 807.
21. S. M. Sze: Physics of Semiconductor Devices (Wiley, New York, 1981).
22. F. Hsu and H. Grinolds: IEEE Electron Device Lett. 5 (1984) 71.
23. T. H. Ning, P. W. Cook, R. H. Dennard, C. M. Schuster, and H. N. Yu: IEEE Trans. Electron Devices 26 (1979) 346.
24. Z. Arefinia and A. A. Orouji: Physica E 41 (2008) 196.