Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 4, 2009, Pages 552-557

  Orouji, Ali A ^a   Arefinia, Zahra ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

CNTFET; Dual material gate (DMG); Nonequilibrium Green's function (NEGF); Short channel effects (SCEs)

Indexed keywords

CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; FUNCTIONS; GREEN'S FUNCTION; MATERIALS; NANOCOMPOSITES; NANOSENSORS; NANOTUBES; POISSON EQUATION; PROBABILITY DENSITY FUNCTION; QUANTUM CHEMISTRY; TRANSISTORS;

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CHANNEL REGIONS; CNTFET; CONTACTING METALS; DINGER EQUATIONS; DRAIN CONDUCTANCES; DRAIN-INDUCED BARRIER LOWERING; DUAL MATERIAL GATE (DMG); HOT-CARRIER EFFECTS; NON EQUILIBRIUMS; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); OFF CURRENTS; OPEN BOUNDARY CONDITIONS; POTENTIAL VARIATIONS; QUANTUM SIMULATIONS; SELF-CONSISTENT SOLUTIONS; SHORT-CHANNEL EFFECTS (SCES); SIMULATION RESULTS; SIMULATION STUDIES; STEP FUNCTIONS; SUB-THRESHOLD SWINGS; TWO-DIMENSIONAL; VOLTAGE GAINS;

MOSFET DEVICES;

EID: 60349118351     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.10.005     Document Type: Article

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