The effect of annealing on the 0.5% Ce-doped Ba(ZrxTi1-x)O3 (BZT) thin films deposited by RF magnetron sputtering system

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 211-214

  Choi, Won Seok ^a   Boo, Jin Hyo ^a   Yi, Junsin ^a   Hong, Byungyou ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Ce doped Ba(ZrxTi1 x)O3 (BCZT); Ferroelectric materials; Multilayer ceramic capacitor (MLCC); RF magnetron sputtering; Thin film

Indexed keywords

ANNEALING; CERAMIC CAPACITORS; CERIUM; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; FILM GROWTH; MAGNETRON SPUTTERING; OXYGEN; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION;

RADIO FREQUENCY MAGNETRON SPUTTERING;

BARIUM COMPOUNDS;

EID: 0036557714     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00075-6     Document Type: Conference Paper

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