Enhanced dielectric tunability properties of Ba(ZrxTi1-x)O3 thin films using seed layers on Pt/Ti/SiO2/Si substrates

Ceramics International

Volumn 34, Issue 4, 2008, Pages 905-910

  Zhai, Jiwei ^a   Gao, Cheng ^a   Yao, Xi ^a   Xu, Zhengkui ^b   Chen, Haydn ^b  

^a TONGJI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A. Films; A. Sol gel processes; C. Dielectric properties; Microstructure

Indexed keywords

BARIUM COMPOUNDS; DIELECTRIC PROPERTIES; MICROSTRUCTURE; MOLECULAR ORIENTATION; SOL-GEL PROCESS;

DIELECTRIC TUNABILITY; SEED LAYERS; SOL-GEL DEPOSITION;

THIN FILMS;

EID: 42649120352     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.10.001     Document Type: Article

References (21)

1. 3 thin films on c-plane sapphire substrates. Appl. Phys. Lett. 89 (2006) 022901
2. 3 thin films for tunable microwave devices. J. Appl. Phys. 95 (2004) 1416-1419
3. Tagantsev A.K., Sherman V.O., Astafiev K.F., Venkatesh J., and Setter N. Ferroelectric materials for microwave tunable applications. J. Electroceram. 11 (2003) 5-66
4. 3 thin films. Chem. Mater. 18 (2006) 3343-3350
5. Wu T.B., Wu C.M., and Chen M.L. Highly insulative barium zirconate-titanate thin films prepared by RF-magnetron sputtering for dynamic random access memory applications. Appl. Phys. Lett. 69 (1996) 2659-2661
6. 3 ceramics. Eur. Phys. J. B 9 (1999) 599-604
7. 3 thin films deposited by RF-magnetron sputtering. J. Cryst. Growth 237-239 (2002) 438-442
8. 3 thin films grown by a sol-gel process. Appl. Phys. Lett. 84 (2004) 3136-3138
9. 3 system. J. Mater. Chem. 9 (1999) 1609-1613
10. 3 single crystals by the laser heated pedestal growth technique. J. Cryst. Growth 233 (2001) 460-465
11. 3 thick films as tunable microwave dielectrics. J. Eur. Ceram. Soc. 24 (2004) 1729-1733
12. 3 thin films. Appl. Phys. A 81 (2004) 25-29
13. Xu J., Menesklou W., and Ivers-tiffee E. Annealing effects on structural and dielectric properties of tunable BZT thin films. J. Electroceram. 13 (2004) 229-233
14. 3 thin films grown by a sol-gel process. J. Eur. Ceram. Soc. 26 (2006) 1917-1920
15. 3 thin films on Si substrate. J. Mater. Res. 13 (1998) 2291-2294
16. 3 thin films. Appl. Phys. Lett. 81 (2002) 340-342
17. 3 thin films. Appl. Phys. Lett. 80 (2002) 3997-3999
18. 2/Si substrates. J. Mater. Res. 17 (2002) 2831-2836
19. 3 thin films. Appl. Phys. Lett. 79 (2001) 254-256
20. 3 thin films for high-performance microwave phase shifters. Appl. Phys. Lett. 76 (2000) 1920-1922
21. 3 thin films prepared by the sol-gel process. J. Phys. D: Appl. Phys. 37 (2004) 748-752