Annealing effects on structural and dielectric properties of tunable BZT thin films

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 229-233

  Xu, Jin ^a   Menesklou, Wolfgang ^a   Ivers Tiffée, Ellen ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

Ba(Zr, Ti)O3; RF sputtering; Thin films; Tunable dielectric properties

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CRYSTALLIZATION; DIELECTRIC LOSSES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELDS; ELECTRODES; LEAKAGE CURRENTS; MULTICARRIER MODULATION; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; WIRELESS TELECOMMUNICATION SYSTEMS;

BA(ZR, TI)O3; RF SPUTTERING; TUNABILITY; TUNABLE DIELECTRIC PROPERTIES;

FERROELECTRIC THIN FILMS;

EID: 17044434231     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5103-1     Document Type: Conference Paper

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