Effect of substitution of Ti by Zr in BaTiO3 thin films grown by MOCVD

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 237-241

  Pantou, R ^a,c   Dubourdieu, C ^a   Weiss, F ^a   Kreisel, J ^a   Kobernik G ^b   Haessler, W ^b  

^a Grenoble INP Phelma   (France)

^b IFW DRESDEN   (Germany)

^c Fraunhofer Inst P M S D   (Germany)

Author keywords

BaTiO3; Ferroelectric; MOCVD; Relaxation phenomenon; Thin film

Indexed keywords

COMPOSITION; CRYSTAL STRUCTURE; DIELECTRIC RELAXATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PEROVSKITE; RAMAN SPECTROSCOPY; SOLID SOLUTIONS; SUBSTITUTION REACTIONS; THIN FILMS; TITANIUM; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM;

PRECURSORS;

BARIUM TITANATE;

EID: 0036557726     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00080-X     Document Type: Conference Paper

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