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Volumn 90, Issue 2, 2008, Pages 329-331

Physical and electrical characteristics of Ba(Zr0.1Ti 0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL STRUCTURE; LEAKAGE CURRENTS; NONVOLATILE STORAGE; PLASMA APPLICATIONS; SURFACE TREATMENT; X RAY DIFFRACTION;

ELECTRICAL CHARACTERISTICS; LEAKAGE CURRENT DENSITY; OXYGEN PLASMA TREATMENT;

THIN FILMS;

EID: 36749047875 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-4277-1 Document Type: Article

Times cited : (20)

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