Dielectric properties of (001)-oriented Ba(Zr0.25Ti 0.75)O3 thin films prepared by pulsed laser deposition

Ferroelectrics

Volumn 357, Issue 1 PART 3, 2007, Pages 121-127

  Yun, P ^a   Wang, D Y ^a   Ying, Z ^a   Zhou, X Y ^a   Tian, H Y ^a   Wang, Y ^a   Chan, H L W ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

BZT thin film; PLD; Tunability

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; BROAD FREQUENCY RANGE; BULK CERAMICS; BZT THIN FILMS; DC BIAS; DC ELECTRIC FIELD; FINE GRAINS; FREQUENCY RANGES; PURE PEROVSKITE PHASE; RELATIVE PERMITTIVITY; SINGLE CRYSTAL SUBSTRATES; TUNABILITIES;

BARIUM; ELECTRIC FIELDS; FERROELECTRICITY; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER DEPOSITION; PULSED LASERS; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS; ZIRCONIUM;

DEPOSITION;

EID: 75449090274     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190701542315     Document Type: Conference Paper

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