Dielectric and ferroelectric properties of Ba(Zr0.35Ti 0.65)O3 thin films grown by a sol-gel process

Journal of Electroceramics

Volumn 11, Issue 3, 2003, Pages 157-161

  Jiwei, Zhai ^a   Xi, Yao ^a   Bo, Shen ^a   Liangying, Zhang ^a   Chen, Haydn ^b  

^a TONGJI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ferroelectric thin films; Relaxor behavior; Sol gel; Tunability

Indexed keywords

BARIUM COMPOUNDS; CURRENT DENSITY; DIELECTRIC LOSSES; FERROELECTRICITY; FILM GROWTH; LEAKAGE CURRENTS; PEROVSKITE; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

DIELECTRIC MEASUREMENTS; RELAXOR BEHAVIORS; TUNABILITY;

FERROELECTRIC THIN FILMS;

EID: 3543082914     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JECR.0000026369.29093.ca     Document Type: Article

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