Characterization of Ba(Zr0.2Ti0.8)O3 thin films deposited by RF-magnetron sputtering

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 I, 2002, Pages 438-442

  Choi, Won Seok ^a   Jang, Bum Sik ^a   Lim, Dong Gun ^a   Yi, Junsin ^a   Hong, Byungyou ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

A3. Physical vapor deposition processes; B1. Barium compounds; B2. Ferroelectric materials

Indexed keywords

BARIUM COMPOUNDS; CERAMIC CAPACITORS; CHARACTERIZATION; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SUBSTRATES; THICKNESS MEASUREMENT;

MULTILAYER CERAMIC CAPACITORS (MLCC);

FERROELECTRIC THIN FILMS;

EID: 0036530507     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01965-0     Document Type: Conference Paper

References (10)