Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol-gel method

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1245-1249

  Gao, L N ^a   Song, S N ^a   Zhai, J W ^a   Yao, X ^a   Xu, Z K ^b  

^a TONGJI UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A1. Characterization; A1. Crystal structure; A1. X ray diffraction; B1. Oxides; B2. Ferroelectric materials

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL ORIENTATION; FERROELECTRIC MATERIALS; PERMITTIVITY; SOL-GEL PROCESS; X RAY DIFFRACTION;

PREFERRED ORIENTATION;

THIN FILMS;

EID: 39649095614     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.015     Document Type: Article

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