Quantitative analysis of dopant distribution and activation across p-n junctions in AlGaAs/GaAs light-emitting diodes using off-axis electron holography

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 1919-1923

  Chung, Suk ^a   Johnson, Shane R ^b   Ding, Ding ^b   Zhang, Yong Hang ^b   Smith, David J ^a   McCartney, Martha R ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

Author keywords

AlGaAs GaAs heterostructure; Dopant activation; Dopant profiling; Electron holography; Light emitting diode (LED)

Indexed keywords

ACTIVATION EFFICIENCY; ALGAAS/GAAS; ALGAAS/GAAS HETEROSTRUCTURE; BAND EDGE; DEVICE DESIGNERS; DOPANT ACTIVATION; DOPANT CONCENTRATIONS; DOPANT DISTRIBUTION; DOPANT LEVELS; DOPANT PROFILING; DOPING PROFILES; ELECTROSTATIC POTENTIALS; HETEROSTRUCTURES; JUNCTION PROFILES; LIGHT-EMITTING DIODE (LED); OFF-AXIS ELECTRON HOLOGRAPHY; P-N JUNCTION; QUANTITATIVE ANALYSIS;

ACTIVATION ANALYSIS; CURRENT DENSITY; DIODES; ELECTRON HOLOGRAPHY; ELECTRONS; HETEROJUNCTIONS; HOLOGRAPHIC INTERFEROMETRY; LIGHT EMISSION; LIGHT TRANSMISSION; SEMICONDUCTOR DOPING;

LIGHT EMITTING DIODES;

EID: 69549103251     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2025914     Document Type: Article

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