Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1277-1283

  Gopalan, Chakravarthy ^a   Chakraborty, Partha S ^a   Yang, Jinman ^a   Kim, Taehoon ^a   Wu, Zhiyuan ^a   McCartney, Molly R ^a   Goodnick, Stephen M ^a   Kozicki, Michael N ^a   Thornton, Trevor J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electron holography; MOSFET; Ultra shallow source drain

Indexed keywords

ACTIVATION ENERGY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON HOLOGRAPHY; GATES (TRANSISTOR); MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS;

ACTIVATION EFFICIENCY; CHARGE CONCENTRATION; ELECTRICAL JUNCTION DEPTH; RAPID THERMAL PROCESSING; SPIN-ON-DOPANTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042172978     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813467     Document Type: Article

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