Semiconductor dopant profiling by off-axis electron holography

Ultramicroscopy

Volumn 94, Issue 2, 2003, Pages 149-161

  Li, Jing ^a   McCartney, M R ^a   Smith, David J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLOGRAPHY; ELECTROSTATICS; HOLOGRAMS; ORGANIC COATINGS; PHASE MEASUREMENT; SEMICONDUCTOR DEVICE MODELS; SILICON WAFERS;

ELECTROSTATIC POTENTIAL;

SEMICONDUCTOR DOPING;

SILICON DERIVATIVE;

ARTICLE; ELECTRIC POTENTIAL; HOLOGRAPHY; MATERIAL COATING; RELIABILITY; SEMICONDUCTOR;

EID: 0346667103     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0304-3991(02)00260-7     Document Type: Article

References (22)

1. Diebold A.C., Kump M.R., Kopanski J.J., Seller D.G. J. Vac. Sci. Technol. B. 14:1996;196.
2. ITRS Metrology 2000 Update, Table 84a: 2000 Front End Processes Technology Requirements - Near Term, Semiconductor Industry Association, San Jose.
3. Subrahmanyan R. J. Vac. Sci. Technol. B. 10:1992;358.
4. McCartney M.R., Smith D.J., Hull R., Bean J.C., Völkl E., Frost B. Appl. Phys. Lett. 65:1994;2603.
5. Rau W.D., Schwander P., Baumann F.H., Höppner W., Ourmazd A. Phys. Rev. Lett. 82:1999;2614.
6. Rau W.D., Schwander P., Ourmazd A. Phys. Stat. Sol. B. 222:2000;213.
7. McCartney M.R., Ponce F.A., Cai J., Bour D.P. Appl. Phys. Lett. 76:2000;3055.
8. McCartney M.R., Smith D.J., Farrow R.F.C., Marks R.F. J. Appl. Phys. 82:1997;2461.
9. de Ruijter W.J., Weiss J.K. Ultramicroscopy. 50:1993;269.
10. Li J., McCartney M.R., Dunin-Borkowski R.E., Smith D.J. Acta Crystallogr. A. 65:1999;652.
11. Tan I.-H., Snider G.L., Chang L.D., Hu E.L. J. Appl. Phys. 68:1990;4071.
12. Gajdardziska-Josifovska M., McCartney M.R., de Ruijter W.J., Smith D.J., Weiss J.K., Zuo J.M. Ultramicroscopy. 50:1993;285.
13. M. Gajdardziska-Josifovska,A.H. Carim, in: E. Völkl, L. Allard, D.C. Joy (Eds.), Introduction to Electron Holography, Plenum, New York, 1999 (Chapter 12).
14. Ravikumar V., Rodrigues R.P., Dravid V.P. Phys. Rev. Lett. 75:1995;4063.
15. Johnson K.D., Dravid V.P. Interface Sci. 8:2000;189.
16. Barnard J.S., Cherns D. J. Electron Microscopy. 49:2000;281.
17. McCartney M.R., Gajdardziska-Josifovska M. Ultramicroscopy. 53:1994;283.
18. Weiss J.K., de Ruijter W.J., McCartney M.R., Gajdardziska-Josifovska M., Smith D.J. Ultramicroscopy. 50:1993;301.
19. Frabboni S., Matteucci G., Pozzi G. Ultramicroscopy. 23:1987;29.
20. Matteucci G., Missiroli G.F., Pozzi G. J. Electron Microsc. 45:1996;27.
21. McCartney M.R., Gribelyuk M.A., Li J., Ronsheim P., McMurray J.S., Smith D.J. Appl. Phys. Lett. 80:2002;3213.
22. Gribelyuk M.A., McCartney M.R., Li J., Murthy C.S., Ronsheim P., Doris B., Hedge S., McMurray J.S., Smith D.J. Phys. Rev. Lett. 89:2002;025502.