Sample preparation for precise and quantitative electron holographic analysis of semiconductor devices

Microscopy and Microanalysis

Volumn 12, Issue 4, 2006, Pages 295-301

  Han, Myung Geun ^a   Li, Jing ^a   Xie, Qianghua ^b   Fejes, Peter ^b   Conner, James ^b   Taylor, Bill ^b   McCartney, Martha R ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Charging; Dopant encroachment; Dopant profiling; Electron holography; Electrostatic potential distribution; Gate length; Sample preparation

Indexed keywords

EID: 33746189796     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927606060351     Document Type: Article

References (14)

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