Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography

Physical Review Letters

Volumn 89, Issue 2, 2002, Pages

  Gribelyuk, M A ^a   McCartney, M R ^b   Li, Jing ^b   Murthy, C S ^a   Ronsheim, P ^a   Doris, B ^a   McMurray, J S ^a   Hegde, S ^c,d   Smith, David J ^b  

^a IBM MICROELECTRONICS   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c IBM RESEARCH   (United States)

^d INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; ELECTRIC POTENTIAL; ELECTRON HOLOGRAPHY; ELECTROSTATICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

ELECTROSTATIC POTENTIAL;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0037043008     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.025502     Document Type: Article

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