Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Journal of Applied Physics

Volumn 103, Issue 11, 2008, Pages

  Ikarashi, Nobuyuki ^a   Ikezawa, Takeshi ^a   Uejima, Kazuya ^a   Fukai, Toshinori ^b   Miyamura, Makoto ^a   Toda, Akio ^a   Hane, Masami ^a  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CHARGED PARTICLES; COMPUTER NETWORKS; DATA RECORDING; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON HOLOGRAPHY; ELECTRONS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; IMAGE SEGMENTATION; IMAGING TECHNIQUES; INTERFEROMETRY; ION BEAMS; LASER RECORDING; METAL ANALYSIS; MOSFET DEVICES; PHOTOACOUSTIC EFFECT; PHOTONICS; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SILICON; SPECIMEN PREPARATION; TECHNOLOGY; TRANSISTORS;

(MO Y) DOPING; (OTDR) TECHNOLOGY; AMERICAN INSTITUTE OF PHYSICS (AIP); B-IMPLANTATION; BULK METALS; ELECTROSTATIC POTENTIAL (ESP); EXPERIMENTAL ANALYSIS; EXPERIMENTAL RESULTS; GA TE LENGTHS; IMPLANTATION PROCESS; ION MILLING; JUNCTION ABRUPTNESS; JUNCTION FORMATION; JUNCTION PROFILES; LOW ENERGIES; METAL-OXIDE SEMICONDUCTOR (MOS); MILLISECOND ANNEALING; MONTE CARLO (MC); MOSFETS; POTENTIAL DISTRIBUTIONS; PROCESS SIMULATIONS; ROLL-OFF CHARACTERISTICS; SCALING LIMITS; SHALLOW JUNCTIONS; SI(2 1 1) SUBSTRATES; SOURCE-DRAIN;

SEMICONDUCTOR JUNCTIONS;

EID: 45149116193     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937246     Document Type: Article

References (24)

1. Y. Taur, C. H. Wann, and D. J. Frank, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1998, 789.
2. H. Wakabayashi, S. Yamagami, N. Ikezawa, A. Ogura, M. Narihiro, K. Arai, Y. Ochiai, K. Takeuchi, T. Yamamoto, and T. Mogami, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2003, 989.
3. N. Yasutake, K. Ohuchi, M. Fujiwara, K. Adachi, A. Hokazono, K. Kojima, N. Aoki, H. Suto, T. Watanabe, T. Morooka, H. Mizuno, S. Magoshi, T. Shimizu, S. Mori, H. Oguma, T. Sasaki, M. Ohmura, K. Miyano, H. Yamada, H. Tomita, D. Matsushita, K. Muraoka, S. Inaba, M. Takayanagi, K. Ishimaru, and H. Ishiuchi, Symposium on VLSI Technology, Digest of Technical Papers, 2004, p. 84.
4. S. Kawanaka, A. Hokazona, N. Yasutake, K. Tatsumura, M. Koyama, and Y. S. Toyoshima, International Symposium on VLSI Technology, Systems and Applications, 2007, p. 1.
5. K. Uejima, K. Yako, N. Ikarashi, M. Narihiro, M. Tanaka, T. Nagumo, A. Mineji, S. Shishiguchi, and M. Hane, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 151.
6. T. Aoyama, S. Umisedo, N. Hamamoto, T. Nagayama, and M. Tanjyo, International Workshop on Junction Technology, 2006 (unpublished), p. 88.
7. J. Borland, F. Ootsuka, T. Aoyama, T. Onizawa, and A. Buczkowski, International Workshop on Junction Technology, 2007 (unpublished), p. 69.
8. A. Mineji, J. Borland, S. Shishiguchi, M. Hane, M. Tanjyo, and T. Nagayama, International Workshop on Junction Technology, 2007, p. 73.
9. M. Narihiro, T. Iwamoto, T. Yamamoto, T. Ikezawa, K. Yako, M. Tanaka, A. Mineji, Y. Okuda, K. Uejima, S. Shishiguchi, and M. Hane, Technical Digest of the International Conference on Advanced Thermal Processing of Semiconductors, 2006 (unpublished) p. 147.
10. M. Hane, T. Ikezawa, T. Matsuda, and S. Shishiguchi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 975.
11. K. Adachi, K. Ohuchi, N. Aoki, H. Sujii, T. Ito, H. Tokawa, K. Matsuo, K. Suguro, Y. Honguh, N. Tamaoki, K. Ishimaru, and H. Ishiuchi, Symposim on VLSI Technology, Digest of Technical Papers, 2005, p. 142.
12. H. Fukutome, Y. Momiyama, E. Yoshida, M. Okuno, T. Itakura, and T. Aoyama, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005, 4.
13. L. Zhang, K. Adachi, K. Tanimoto, and A. Nishiyama, Technical Digest of the International Reliability Physics Symposium, 2007 (unpublished), p. 516.
14. N. Ikarashi, M. Oshida, M. Miyamura, M. Saitoh, A. Mineji, and S. Shishiguchi, Jpn. J. Appl. Phys. JAPNDE 0021-4922 47, 2365 (2008).
15. W. D. Rau, P. Schwander, F. H. Baumann, W. Hoppner, and A. Ourmazd, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82.2614 82, 2614 (1999).
16. A. C. Twitchett, R. E. Dunin-Borkowski, and P. A. Midgley, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.88.238302 88, 238302 (2002).
17. R. E. Dunin-Borkowski, S. B. Newcomb, T. Kasama, M. R. McCartney, M. Wey-landa, and P. A. Midgley, Ultramicroscopy ULTRD6 0304-3991 10.1016/j.ultramic.2004.11.018 103, 67 (2005).
18. M. G. Han, J. Li, Q. Xie, P. Fejes, J. Conner, B. Taylor, and M. R. McCartney, Microsc. Microanal. MIMIF7 1431-9276 10.1017/S1431927606060351 12, 295 (2006).
19. U. Muehle, A. Lenk, R. Weiland, and H. Lichte, Microelectron. Reliab. MCRLAS 0026-2714 10.1016/j.microrel.2005.07.043 45, 1558 (2005).
20. L. Xia, W. Wu, Y. Hao, Y. Wang, and J. Xu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2195109 88, 152108 (2006).
21. J. P. McCaffery, M. W. Phaneuf, and L. D. Madsen, Ultramicroscopy ULTRD6 0304-3991 10.1016/S0304-3991(00)00096-6 87, 97 (2001).
22. L. Reimer, Transmission Electron Microscopy (Springer-Verlag, Berin, 1982).
23. Electrostatic potentials φ in the p-and n -type regions are defined by the following equations: φ= kT e ln (n ni) (n-type region), φ=- kT e ln (p ni) (p-type region), where ni is the intrinsic carrier concentration in Si, and n and p are the carrier concentrations in the n -type and p -type regions, respectively [S. M. Sze, Physics of Semiconductors, 2nd ed. (Wiley, New York, 1981)].
24. D. Williams and C. Carter, Transmission Electron Microscopy (Plenum, New York, 1996).