Electron holography characterization of ultra shallow junctions in 30-nm-gate-length metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2365-2368

  Ikarashi, Nobuyuki ^a   Oshida, Makiko ^a   Miyamura, Makoto ^a   Saitoh, Motofumi ^a   Mlneji, Akira ^b   Shishiguchi, Seiichi ^b  

^a NEC CORPORATION   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

B distribution; Co implantation; Electron holography; Metal oxide semiconductor field effect transistors; p n junction

Indexed keywords

COBALT; COBALT COMPOUNDS; DATA RECORDING; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON HOLOGRAPHY; ELECTRONS; FIELD EFFECT TRANSISTORS; HOLOGRAPHIC INTERFEROMETRY; HOLOGRAPHY; ION BEAMS; LASER RECORDING; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; SILICON ON INSULATOR TECHNOLOGY; SPECIMEN PREPARATION; TRANSISTORS;

B DISTRIBUTION; CO-IMPLANTATION; DRAIN EXTENSIONS; ELECTROSTATIC POTENTIALS; IMPLANTATION TECHNIQUES; ION MILLINGS; MOSFETS; P-N JUNCTION; P-N JUNCTIONS; POTENTIAL CHANGES; POTENTIAL DISTRIBUTIONS; SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 45149132903     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2365     Document Type: Article

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