Improved reliability of Mo nanocrystal memory with ammonia plasma treatment

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Lin, Chao Cheng ^a   Chang, Ting Chang ^b   Tu, Chun Hao ^a   Chen, Wei Ren ^a   Hu, Chih Wei ^a   Sze, Simon M ^a   Tseng, Tseung Yuen ^a   Chen, Sheng Chi ^c   Lin, Jian Yang ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DURABILITY; FLASH MEMORY; MOLYBDENUM; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NITROGEN; NONVOLATILE STORAGE; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTOR STORAGE; WINDOWS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIA PLASMA TREATMENTS; CHARGE STORAGES; IMPROVED RELIABILITIES; MEMORY WINDOWS; NANOCRYSTAL MEMORIES; NON STOICHIOMETRIES; NON-VOLATILE MEMORIES; X-RAY PHOTOELECTRON SPECTRUM;

PASSIVATION;

EID: 60349087304     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3081021     Document Type: Article

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