Electrical property of nonvolatile memory with SiC nano-particles formed in SiO2

Superlattices and Microstructures

Volumn 46, Issue 1-2, 2009, Pages 182-187

  Lee, Tae Hee ^a   Lee, Dong Uk ^a   Kim, Eun Kyu ^a   Shin, Jin Wook ^b   Cho, Won Ju ^b  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

Nano floating gate memory; Nano particles; Nonvolatile memory; SiC

Indexed keywords

ARGON GAS; AVERAGE SIZE; ELECTRICAL PROPERTY; FLAT-BAND VOLTAGE SHIFT; GATE CAPACITORS; GATE VOLTAGES; MEMORY WINDOW; NANO-FLOATING GATE MEMORY; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; OXIDE LAYER; POST-THERMAL ANNEALING; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RETENTION CHARACTERISTICS; SIC; THIN LAYERS; TUNNEL OXIDE];

ARGON; ELECTRIC PROPERTIES; NANOPARTICLES;

SILICON CARBIDE;

EID: 67249083766     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.018     Document Type: Article

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