Inductively coupled plasma etching of GaN using SiCl4/Cl 2/Ar for submicron-sized features fabrication

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2634-2637

  Dylewicz, R ^a   Hogg, R A ^b   Fry, P W ^b   Parbrook, P J ^b   Airey, R ^b   Tahraoui, A ^b   Patela, S ^a  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b Engineering and Physical Sciences Research Council UK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DRY-ETCHING; FABRICATION PROCESSES; FULLY INTEGRATED; GAN LAYERS; GRATING COUPLERS; INDUCTIVELY COUPLED PLASMA ETCHING; N-DOPED; NITRIDE SEMICONDUCTORS; OPTICAL COUPLERS;

CRYSTALS; ELECTRIC CONDUCTIVITY; ETCHING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; NITRIDES; OPTICAL DESIGN; PHOTORESISTS; PLASMA ETCHING; SEMICONDUCTOR MATERIALS;

SEMICONDUCTING GALLIUM;

EID: 49749103945     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674851     Document Type: Conference Paper

References (3)

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