Etching selectivity and surface profile of GaN in the Ni, SiO2 and photoresist masks using an inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1242-1243

  Chang, L B ^a   Liu, S S ^a   Jeng, M J ^a  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

Author keywords

Etched surface profile; GaN; Inductively coupled plasma (ICP); Selectivity

Indexed keywords

ETCHING; INDUCTIVELY COUPLED PLASMA; MASKS; NICKEL; PHOTORESISTS; SILICA; SURFACE PROPERTIES;

PHOTORESIST MASKS;

GALLIUM NITRIDE;

EID: 0035269754     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1242     Document Type: Article

References (5)