Reactive ion etching of GaN/InGaN using BCl3 plasma

Materials Chemistry and Physics

Volumn 77, Issue 2, 2002, Pages 411-415

  Hong, H F ^a,b   Chao, C K ^a   Chyi, J I ^a   Tzeng, Y C ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

GaN; InGaN; Reactive ion etching; Thermal annealing

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BORON COMPOUNDS; ELECTRIC POTENTIAL; PHOTOLUMINESCENCE; PLASMAS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

THERMAL ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037437433     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(02)00014-7     Document Type: Article

References (16)