Adsorption-controlled growth of BiFeO 3 by MBE and integration with wide band

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 56, Issue 8, 2009, Pages 1528-1533

  Ihlefeld, Jon F ^a   Tian, Wei ^b   Liu, Zi Kui ^c   Doolittle, W Alan ^d   Bernhagen, Margitta ^e   Reiche, Peter ^e   Uecker, Reinhard ^e   Rramesh, Ramamoorthy ^f   Schlom, Darrell G ^g  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b SEAGATE TECHNOLOGY   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^f University of California Berkeley   (United States)

^g School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; BISMUTH OXIDES; CONTROLLED GROWTH; FIELD-EFFECT DEVICES; FULL-WIDTH AT HALF-MAXIMUM; HIGH BANDGAP; IN-PLANE ORIENTATION; INPLANE ROTATION; ROCKING CURVES; SINGLE CRYSTAL SUBSTRATES; SRTIO; THERMODYNAMIC CALCULATIONS; TIO; WIDE-BAND; X- RAY DIFFRACTION;

ADSORPTION; BISMUTH; CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; STOICHIOMETRY; STRONTIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PRESSURE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 68749091300     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2009.1216     Document Type: Conference Paper

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