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Applied Physics Letters

Volumn 91, Issue 2, 2007, Pages

+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures

(10) Yang, S Y a Zhan, Q a Yang, P L a Cruz, M P a Chu, Y H a Ramesh, R a Wu, Y R b Singh, J b Tian, W c Schlom, D G c

a University of California Berkeley (United States)

b UNIVERSITY OF MICHIGAN (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HYSTERESIS; MAGNETIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

GROWTH ORIENTATION; INTERFACE CONTROL; ROTATIONAL TWINS; SWEEPING VOLTAGE;

EPITAXIAL GROWTH;

EID: 34547202484 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2757089 Document Type: Article

Times cited : (56)

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