RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy

Journal of Electroceramics

Volumn 4, Issue 2, 2000, Pages 385-391

  Haeni, J H ^a   Theis, C D ^a   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM; DOPING (ADDITIVES); FILM GROWTH; LANTHANUM; MOLECULAR BEAM EPITAXY; MONOLAYERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STOICHIOMETRY; STRONTIUM COMPOUNDS;

COMPOSITION CONTROL; SEQUENTIAL DEPOSITION; STRONTIUM TITANATE;

THIN FILMS;

EID: 0034205888     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1009947517710     Document Type: Article

References (21)

1. I. Bozovic, J.N. Eckstein, M.F. Virshup, A. Chaiken, M. Wall, R. Howell, and M. Fluss, J. Supercond., 7, 187 (1994).
2. J.H. Haeni, C.D. Theis, D.G. Schlom, W. Tian, X.Q. Pan, H. Chang, I. Takeuchi and X.D. Xiang, submitted to Appl. Phys. Lett.
3. D.G. Schlom and J.S. Harris, Jr. in Molecular Beam Epitaxy: Applications to Key Materials, edited by R.F.C. Farrow (Noyes, Park Ridge, 1995), pp. 505-622.
4. M.E. Klausmeier-Brown, J.N. Eckstein, I. Bozovic, and G.F. Virshup, Appl. Phys. Lett., 60, 657 (1992).
5. S.J. Benerofe, C.H. Ahn, M.M. Wang, K.E. Kihlstrom, K.B. Do, S.B. Armason, M.M. Fejer, T.H. Geballe, M.R. Beasley, and R.H. Hammond, J. Vac. Sci. Technol. B, 12, 1217 (1994).
6. C. Lu and Y. Guan, j. Vac. Sci. Technol. A, 13, 1797 (1995).
7. M. Bortz and T. Day, Laser Focus World, 32, 95-104 (1996).
8. W. Wang, R.H. Hammond, M.M. Fejer, C.H. Ahn, M.R. Beasley, M.D. Levenson, and M.L. Bortz, Appl. Phys. Lett., 67, 1375-1377 (1995).
9. I. Bozovic and J.N. Eckstein, MRS Bulletin, 20, 32-38 (1995).
10. P. Bodin, S. Sakai, and Y. Kasai, Jpn. J. Appl. Phys., Part 2 31, L949-L952 (1992).
11. S. Migita, Y. Kasai, and S. Sakai, J. Low Temp. Phys., 105, 1337-1342 (1996).
12. T. Terashima, Y. Bando, K. Iijima, K. Yamamoto, K. Hirata, K. Hayashi, K. Kamigaki, and H. Terauchi, Phys. Rev. Lett., 65, 2684-2687 (1990).
13. K. Iijima, T. Terashima, Y. Bando, K. Kamigaki, and H. Terauchi, J. Appl. Phys., 72, 2840-2845 (1992).
14. M. Yoshimoto, H. Ohkubo, N. Kanda, and H. Koinuma, Jpn. J. Appl. Phys., Part 1 31, 3664-3666 (1992).
15. D.G. Schlom, J.N. Eckstein, E.S. Hellman, S.K. Streiffer, J.S. Harris, Jr., M.R. Beasley, J.C. Bravman, T.H. Geballe, C. Webb, K.E. von Dessonneck, and F. Turner, Appl. Phys. Lett., 53, 1660-1662 (1988).
16. D.G. Schlom, C.D. Theis, and M.E. Hawley, Integrated Thin Films and Applications, edited by R.K. Pandey, D.E. Witter, and U. Varshney, 86, 41-60, American Ceramic Society, Westerville (1998).
17. C.D. Theis and D.G. Schlom, J. Vac. Sci. Technol. A, 14, 2677-2679 (1996).
18. M. Kawasaki, K. Takahashi, T. Maeda, R. Tsuchiya, M. Shinohara, O. Ishiyama, T. Yonezawa, M. Yoshimoto, and H. Koinuma, Science, 266, 1540-1542 (1994).
19. C.D. Theis and D.G. Schlom, in High Temperature Materials Chemistry IX edited by K.E. Spear, Vol. 97-39, (Electrochemical Society, Pennington, 1997) pp. 610-616.
20. J. Zhang, J.H. Neave, P.J. Dobson, and B.A. Joyce, Appl. Phys. A, 42, 317-326 (1987).
21. Y. Horikoshi, M. Kawashima, and H. Yamaguchi, Jpn. J. Appl. Phys., Part 1 27, 169-179 (1987).