Polar heterostructure for multifunction devices: Theoretical studies

IEEE Transactions on Electron Devices

Volumn 52, Issue 2, 2005, Pages 284-293

  Wu, Yuh Renn ^a   Singh, Jasprit ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

Device simulations; GaAs; GaN; Piezoelectric; Pyroelectric; Sensor; Silicon; Stress sensor; Thermal sensor

Indexed keywords

ELECTRIC CURRENTS; GALLIUM NITRIDE; OXIDES; PIEZOELECTRICITY; PYROELECTRICITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SENSORS; STRESSES; TEMPERATURE CONTROL; TRANSISTORS; VOLTAGE CONTROL;

DEVICE SIMULATIONS; PIEZOELECTRIC COEFFICIENTS; POLAR HETEROSTRUCTURE; PYROELECTRIC COEFFICIENT; STRESS SENSOR; THERMAL SENSOR;

HETEROJUNCTIONS;

EID: 13344286276     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.842546     Document Type: Article

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