Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Biegalski, M D ^a,g   Fong, D D ^b   Eastman, J A ^b   Fuoss, P H ^b   Streiffer, S K ^b   Heeg, T ^c   Schubert, J ^c   Tian, W ^d   Nelson, C T ^d   Pan, X Q ^d   Hawley, M E ^e   Bernhagen, M ^f   Reiche, P ^f   Uecker, R ^f   Trolier Mckinstry, S ^a   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF MICHIGAN   (United States)

^e LOS ALAMOS NATIONAL LABORATORY   (United States)

^f LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^g OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER POSTDEPOSITION ANNEALING; COMPOUND SEMICONDUCTORS; CRITICAL THICKNESSES; CRYSTALLOGRAPHIC DIRECTIONS; HETEROEPITAXIAL; MISFIT DISLOCATIONS; MOLECULAR-BEAM EPITAXIES; PEROVSKITE MATERIALS; PSEUDOCUBIC; ROCKING CURVES; SEMI-CONDUCTORS; SRTIO3 FILMS; STRAIN STATES; STRUCTURAL PERFECTIONS; STRUCTURAL QUALITIES;

CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; FILMS; OXIDE MINERALS; OXYGEN; PEROVSKITE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES;

OXIDE FILMS;

EID: 58149262864     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3037216     Document Type: Article

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