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accepted for publication
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6
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21944443599
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3 single crystals used in this study are obtained from ESCETE, Single Crystal Technology B.V., Enschede, the Netherlands
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3 single crystals used in this study are obtained from ESCETE, Single Crystal Technology B.V., Enschede, the Netherlands.
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7
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21944451166
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note
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-1, whereas for tapping mode Si cantilevers with resonance frequency ranging from 310 to 400 kHz were utilized. Contact forces were kept as low as possible and are estimated to be <10 nN. Lateral or frictional forces are measured simultaneously by the four-quadrant detector. No attempts have been made to quantify the friction force, since the exact lateral force constants of the cantilevers are unknown, the alignment of the laser on the cantilever changes and the humidity in the laboratory is not constant. In all friction force micrographs high frictional forces are displayed as bright white colors and lower forces as dark colors (range of 0.1 V). The observed friction contrast is comparable to that found by Fompeyrine et al. (see Ref. 9). The topographical features in the contact mode micrographs are confirmed by tapping mode imaging.
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8
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21944450753
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note
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-1, and allowed to cool down to room temperature in 3 h.
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10
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0000464098
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-7Torr) at temperatures above 600 °C, before any friction contrast is observed. They conclude high friction domains to be SrO terminated
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-7Torr) at temperatures above 600 °C, before any friction contrast is observed. They conclude high friction domains to be SrO terminated.
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Fompeyrine, J.1
Berger, R.2
Lang, H.P.3
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Gerber, Ch.6
Locquet, J.-P.7
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11
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0004172749
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12
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21944457697
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note
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4 tip (for more details, see Refs. 10 and 12). A second origin of friction is more mechanical in nature, and deals with the stiffness of the cantilever and the tip-sample combination, as expressed in the respective Poisson coefficient, Young's and shear modulus (Ref. 12). Since the friction force depends linearly on the applied load, higher adhesion forces between tip and sample result in higher friction forces. In air, the difference in adhesion is usually caused by differences in water adsorption on the surface.
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13
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0028020164
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C. D. Frisbie, L. F. Rozsnyai, A. Noy, M. S. Wrighton, and C. M. Lieber, Science 265, 2071 (1994);
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0028422080
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R. M. Overney, E. Meyer, J. Frommer, H.-J. Güntherodt, M. Fujihira, H. Takano, and Y. Gotoh, Langmuir 10, 1281 (1994).
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Takano, H.6
Gotoh, Y.7
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16
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0031557645
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3. The energy of the electrons used for RHEED is 20 kV, using an angle of incidence of about 1°. The PLD system with high pressure RHEED is described by
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3. The energy of the electrons used for RHEED is 20 kV, using an angle of incidence of about 1°. The PLD system with high pressure RHEED is described by G. J. H. M. Rijnders, G. Koster, D. H. A. Blank, and H. Rogalla, Appl. Phys. Lett. 70, 1888 (1997).
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Rijnders, G.J.H.M.1
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Blank, D.H.A.3
Rogalla, H.4
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17
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0001235062
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R. Tsuchiya, M. Kawasaki, H. Kubota, J. Nishino, H. Sato, H. Akoh, and H. Koinuma, Appl. Phys. Lett. 71, 1570 (1997).
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Akoh, H.6
Koinuma, H.7
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19
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21944438913
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note
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4F:HF=87.5:12.5 with pH=5.5).
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21
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0001583943
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The results on homo epitaxial growth will be published in a separate paper. The theoretical intensity oscillations are described in in edited by P. K. Larsen and P. J. Dobson Plenum, London
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The results on homo epitaxial growth will be published in a separate paper. The theoretical intensity oscillations are described in M. G. Lagally, D. E. Savage, and M. C. Tringides, in Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, edited by P. K. Larsen and B. A. Merritt, P. J. Dobson (Plenum, London, 1989), pp. 139-174.
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Lagally, M.G.1
Savage, D.E.2
Tringides, M.C.3
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