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Volumn 43, Issue 11 A, 2004, Pages

Growth and characterization of (Ba0.5Sr0.5)TiO 3 films epitaxially grown on (002) GaN/(0006) Al2O 3 electrode

Author keywords

BST; Depth profile; Dielectric properties; Elemental mapping; Epitaxial growth

Indexed keywords

ALUMINUM COMPOUNDS; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; DIELECTRIC PROPERTIES; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODES; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 11144261510     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1425     Document Type: Article
Times cited : (19)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.