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Volumn 43, Issue 11 A, 2004, Pages
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Growth and characterization of (Ba0.5Sr0.5)TiO 3 films epitaxially grown on (002) GaN/(0006) Al2O 3 electrode
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Author keywords
BST; Depth profile; Dielectric properties; Elemental mapping; Epitaxial growth
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Indexed keywords
ALUMINUM COMPOUNDS;
AUGER ELECTRON SPECTROSCOPY;
CAPACITANCE;
DIELECTRIC PROPERTIES;
DYNAMIC RANDOM ACCESS STORAGE;
ELECTRODES;
EPITAXIAL GROWTH;
FERROELECTRIC MATERIALS;
FILM GROWTH;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PULSED LASER DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
DEPTH PROFILE;
ELECTRON CONCENTRATION;
ELEMENTAL MAPPING;
FERROELECTRIC FIELDS;
TITANIUM COMPOUNDS;
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EID: 11144261510
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.43.L1425 Document Type: Article |
Times cited : (19)
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References (15)
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