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Volumn 88, Issue 24, 2006, Pages

Synthesis and ferroelectric properties of epitaxial BiFeO 3 thin films grown by sputtering

(12) Das, R R a Kim, D M a Baek, S H a Eom, C B a Zavaliche, F b Yang, S Y b Ramesh, R b Chen, Y B c Pan, X Q c Ke, X d Rzchowski, M S d Streiffer, S K e

a UNIVERSITY OF WISCONSIN MADISON (United States)

b Lawrence Berkeley National Laboratory (United States)

c UNIVERSITY OF MICHIGAN (United States)

d University of Wisconsin Madison (United States)

e ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIFEO3 THIN FILMS; FERROELECTRIC DOMAINS; FERROELECTRIC PROPERTIES; RHOMBOHEDRAL SYMMETRY;

EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; LIGHT POLARIZATION; SPUTTERING; SYNTHESIS (CHEMICAL); THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

BISMUTH COMPOUNDS;

EID: 33745213557 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2213347 Document Type: Article

Times cited : (258)

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