A simple approach to form Ge nanocrystals embedded in amorphous Lu 2O3 high-k gate dielectric by pulsed laser ablation

Europhysics Letters

Volumn 74, Issue 1, 2006, Pages 177-180

  Yuan, C L ^a   Darmawan, P ^a   Setiawan, Y ^a   Lee, P S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645665342     PISSN: 02955075     EISSN: 12864854     Source Type: Journal    
DOI: 10.1209/epl/i2005-10505-4     Document Type: Article

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