Impact of oxygen adsorption on a population of mass produced carbon nanotube field effect transistors

Carbon

Volumn 47, Issue 6, 2009, Pages 1493-1500

  McClain, Devon ^a   Thomas, Nicole ^a   Youkey, Steven ^a   Schaller, Rebecca ^a   Jiao, Jun ^a   O'Brien, Kevin P ^b  

^a PORTLAND STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON NANOTUBES; CHARGE CARRIERS; CHARGE TRAPPING; GAS ADSORPTION; MESFET DEVICES; OXYGEN; POPULATION STATISTICS; THRESHOLD VOLTAGE; ULTRAHIGH VACUUM;

AMBIENT CONDITIONS; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CHANNEL MORPHOLOGIES; DEVICE CHARACTERIZATIONS; DEVICE MORPHOLOGIES; ELECTRODE INTERFACES; ELECTRON CONDUCTIONS; HOLE CONDUCTIONS; LARGE POPULATIONS; OXYGEN ADSORPTIONS; OXYGEN-RICH ENVIRONMENTS; P TYPES; PURE OXYGENS; SEMI CONDUCTING TUBES; STATISTICAL ANALYSIS; THERMAL-ANNEALING; TRANSPORT BARRIERS; ULTRA-HIGH VACUUMS; VACUUM-ANNEALING;

FIELD EFFECT TRANSISTORS;

EID: 62949148177     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2009.01.042     Document Type: Article

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