AlGaN/GaN Schottky barrier photodetector with multi-MgxN y/GaN buffer

IEEE Sensors Journal

Volumn 9, Issue 2, 2009, Pages 87-92

  Chang, S J ^a   Lee, K H ^a   Chang, P C ^b   Wang, Y C ^a   Kuo, C H ^c   Wu, S L ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN heterostructure; Multi MgxNy GaN buffer; Schottky barrier photodetector

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURE; ALGAN/GAN HETEROSTRUCTURES; DETECTIVITY; GAN BUFFER; LOW TEMPERATURES; MULTI-MGXNY /GAN BUFFER; NOISE LEVELS; PHOTOCONDUCTANCE; REJECTION RATIOS; SCHOTTKY BARRIER PHOTODETECTOR; SCHOTTKY BARRIERS; THREE ORDERS OF MAGNITUDE;

GALLIUM ALLOYS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

GALLIUM NITRIDE;

EID: 68349154812     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2008.2011070     Document Type: Article

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