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Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 44-50

High-quality and crack-free AlxGa1-xN (x∼0.2) grown on sapphire by a two-step growth method

(7) Shih, C F a Keh, M Y b Wang, Y N b Chen, N C b Chang, Chin An b Chang, P H b Liu, K S a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapour deposition; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; CRACK PROPAGATION; CRYSTAL GROWTH; CRYSTALLIZATION; ELECTRON MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL QUALITY; NUCLEATION LAYERS (NL); SEMICONDUCTING III-V MATERIALS; X-RAY ROCKING CURVES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 15944412078 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.01.015 Document Type: Article

Times cited : (18)

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