0.25 μm self-aligned AlGaN/GaN high electron mobility transistors

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 18-20

  Kumar, Vipan ^a   Kim, D H ^a   Basu, A ^a   Adesida, I ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

GaN; High electron mobility transistors (HEMTs); Self aligned; SiC

Indexed keywords

CONTACT RESISTANCE; CURRENT DENSITY; DRAIN CURRENT; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; TRANSCONDUCTANCE;

ANNEALING TEMPERATURE; DRAIN CURRENT DENSITY; KNEE VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 37549001298     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.911612     Document Type: Article

References (13)

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