Silicon dioxide-encapsulated high-voltage AlGaN/GaN HFETs for power-switching applications

IEEE Electron Device Letters

Volumn 28, Issue 9, 2007, Pages 784-786

  Tipirneni, N ^a   Adivarahan, V ^a   Simin, G ^a   Khan, A ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

AlGaN GaN heterostructure field effect transistor (HFET); Breakdown voltage; Field plate (FP); HEMT; High voltage power device; Surface flashover

Indexed keywords

ALGAN-GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR (HFET); BREAKDOWN VOLTAGE; FIELD PLATE (FP); HEMT; HIGH-VOLTAGE POWER DEVICE; SURFACE FLASHOVER;

DIELECTRIC LIQUIDS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ELECTRIC INSULATORS; FLASHOVER; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; IONIZATION OF GASES; MOSFET DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM; SILICA; SURFACES;

FIELD EFFECT TRANSISTORS;

EID: 65249171964     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.903910     Document Type: Article

References (18)

1. S. Karmalkar, J. Deng, M. S. Shur, and R. Gaska, "RESURF AlGaN-GaN HEMT for high voltage power switching," IEEE Electron Device Lett., vol. 22, no. 8, pp. 373-375, Aug. 2001.
2. N.-Q. Zhang, S. Keller, G. Parish, S. Heikman, S. P. Denbaars, and U. K. Mishra, "High breakdown GaN HEMT with overlapping gate structure," IEEE Electron Device Lett., vol. 21, no. 9, pp. 421-423, Sep. 2000.
3. 2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates," Electron. Lett., vol. 36, no. 24, pp. 2043-2044, Nov. 2000.
4. N.-Q. Zhang, B. Moran, S. P. Denbaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Kilovolt AlGaN/GaN HEMTs as switching devices," Phys. Stat. Sol., A, vol. 188, no. 1, pp. 213-217, Nov. 2001.
5. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, and H. Ohashi, "High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior," IEEE Trans. Electron Devices vol. 50, no. 12, pp. 2528-2531, Dec. 2003.
6. H. Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, and U. K. Mishra, "High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates," IEEE Electron Device Lett., vol. 25, no. 4, pp. 161-163, Apr. 2004.
7. R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. A. Khan, and M. S. Shur, "AlGaN/GaN heterostructure FETs with offset gate design," Electron. Lett., vol. 33, no. 14, pp. 1255-1257, Jul. 1997.
8. N. Zhang, V. Mehrotra, S. Chandrasekaran, B.Moran, L. Shen, U. Mishra, E. Etzkorn, and D. Clarke, "Large area GaN HEMT power devices for power electronic applications: Switching and temperature characteristics," in Proc. PESC, 2003, pp. 233-237.
9. W. R. Frensley, "Power-limiting breakdown effects in GaAs MESFETs," IEEE Trans. Electron Devices, vol. ED-28, no. 8, pp. 962-970, Aug. 1981.
10. N. Tipirneni, A. Koudymov, V. Adivarhan, J. Yang, G. Simin, and M. A. Khan, "The 1.6 kV AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 9, pp. 716-718, Sep. 2006.
11. x passivated AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 1, pp. 161-163, Jan. 2006.
12. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. Asif Khan, "Low dynamic on-resistance kilovolt-range AlGaN/GaN HFETs," in Proc. Device Res. Conf., University Park, PA, Jun. 26-28, 2006, pp. 109-110.
13. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates," IEEE Electron Device Lett., vol. 27, no. 9, pp. 713-715, Sep. 2006.
14. W. C. H. Ng, K. W. Chew, and S. F. Chu, "Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors," IEEE Electron Device Lett., vol. 24, no. 8, pp. 506-508, Aug. 2003.
15. J. S. Herman and F. L. Terry, "A two-temperature technique for PECVD deposition of silicon dioxide," IEEE Electron Device Lett., vol. 12, no. 5, pp. 236-237, May 1991.
16. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication, 2nd ed. New York: Oxford Univ. Press, 2001.
17. BCB which is commercially marketed by Dow Chemicals as CYCLOTENE. The materials data sheet, properties and the recommended processing methods are listed at. [Online]. Available: http://www.dow.com/cyclotene/
18. M. Kuball, G. J. Riedel, J. W. Pomeroy, A. Sarua, M. J. Uren, T. Martin, K. P. Hilton, J. O. Maclean, and D. J. Wallis, "Time-resolved temperature measurement of AlGaN/GaN electronic devices using micro-Raman spectroscopy," IEEE Electron Device Lett., vol. 28, no. 2, pp. 86-89, Feb. 2007.