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Volumn 22, Issue 11, 2007, Pages 1245-1248

Quasi-monolithic integration of high-power GaN-based HEMTs for high-frequency applications

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; HIGH FREQUENCY AMPLIFIERS; MICROMACHINING; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES; SILICON; SUBSTRATES; THIN FILMS;

EID: 35648961436     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/11/011     Document Type: Article
Times cited : (7)

References (10)
  • 6
    • 0742303706 scopus 로고    scopus 로고
    • An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications
    • Joodaki M, Kompa G and Hillmer H 2003 An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications IEEE Trans. Adv. Packag. 26 402-9
    • (2003) IEEE Trans. Adv. Packag. , vol.26 , Issue.4 , pp. 402-409
    • Joodaki, M.1    Kompa, G.2    Hillmer, H.3
  • 7
    • 29344441935 scopus 로고    scopus 로고
    • Thermomechanical stress analysis and measurement in quasi-monolithic integration technology (QMIT)
    • Joodaki M, Kompa G and Hillmer H 2005 Thermomechanical stress analysis and measurement in quasi-monolithic integration technology (QMIT) IEEE Trans. Device Mater. Reliab. 5 581-94
    • (2005) IEEE Trans. Device Mater. Reliab. , vol.5 , Issue.3 , pp. 581-594
    • Joodaki, M.1    Kompa, G.2    Hillmer, H.3
  • 9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.