Low-noise and high-detectivity GaN-B ased UV photodiode with a semi-insulating Mg-doped GaN cap layer

IEEE Sensors Journal

Volumn 7, Issue 9, 2007, Pages 1270-1273

  Chang, P C ^a   Yu, C L ^b   Chang, S J ^b   Lin, Y C ^b   Liu, C H ^a   Wu, S L ^c  

^a NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

Detectivity; Metalorganic chemical vapor deposition (MOCVD); Mg doped GaN; Photodiodes

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; LEAKAGE CURRENTS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPURIOUS SIGNAL NOISE; ULTRAVIOLET DEVICES;

DETECTIVITY; INTERFACE STATES; POTENTIAL BARRIERS; ULTRAVIOLET PHOTODIODES;

PHOTODIODES;

EID: 34547458488     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2007.901266     Document Type: Article

References (24)

1. S. Nakamura and G. Fasol, The Blue Laser Diode, 1st ed. Berlin, Germany: Springer-Verlag, 1997.
2. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on pattern sapphire substrates," IEEE Photon. Technol. Lett., vol. 17, no. 2, pp. 288-290, Feb. 2005.
3. H. W. Shim, Y. K. Kim, E. K. Suh, and H. J. Lee, "Effects of etching depth for n-contact and current spreading layer in InGaN/GaN light emitting diodes,"Semicond. Sci. Technol., vol. 19, pp. 774-777, 2004.
4. S. Nakamura, "InGaN-based violet laser diodes," Semicond. Sci. Technol., vol. 14, pp. R27-R40, 1999.
5. S. H. Knox, J. W. M. Rogers, P. N. A. Chyurlia, N. G. Tarr, J. A. Bardwell, H. Tang, and S. Haffouz, "Characterization and modeling of AlGaN/GaN heterostructure field effect transistors for low noise amplifiers," J. Vac. Sci. Technol. A, vol. 24, pp. 629-633, 2006.
6. E. Monroy, E. Munoz, F. J. Sanchez, F. Calle, E. Calleja, B. Beaumont, P. Gibart, J. A. Munoz, and F. Cusso, "High-performance GaN p-n junction photodetectors for solar ultraviolet applications," Semicond. Sci. Technol., vol. 13, pp. 1042-1046, 1998.
7. G. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, and U. K. Mishra, "High-performance (Al, Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN," Appl. Phys. Lett., vol. 75, pp. 247-249, 1999.
8. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. A. Khan, D. Kuksenkov, and H. Temkin, "Schottky barrier detectors on GaN for visible-blind ultraviolet detection," Appl. Phys. Lett., vol. 70, pp. 2277-2279, 1997.
9. F. Omnes, N. Marenco, B. Beaumont, P. De Mierry, E. Monroy, F. Calle, and E. Munoz, "Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications," J. Appl. Phys., vol. 86, pp. 5286-5292, 1999.
10. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes," IEEE Sensors J., vol. 2, no. 4, pp. 366-371, Aug. 2002.
11. 2 on n-type GaN," Appl. Phys. Lett., vol. 68, pp. 1850-1852, 1996.
12. 5/n -GaN metal-oxide-semiconductor structure," Appl. Phys. Lett., vol. 77, pp. 3788-3790, 2000.
13. C. T. Lee, H. W. Chen, and H. Y. Lee, "Metal-oxide-semiconductor devices using Ga203 dielectrics on n-type GaN," Appl. Phys. Lett., vol. 82, pp. 4304-306, 2003.
14. N. Nagai, Q. S. Zhu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki, "Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, pp. 2024-2026, 1998.
15. C. H. Chen, S. J. Chang, and Y. K. Su, "InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer," J. Vac. Sci. Technol. A, vol. 22, pp. 1020-1022, 2004.
16. S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S. Chen, and C. F. Shen, "GaN-based p-i-n sensors with ITO contacts," IEEE Sensors J., vol. 6, no. 4, pp. 406-411, Apr. 2006.
17. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu, and U. H. Liaw, "InGaN-GaN multiquantum-well blue and green light-emitting diodes," IEEE J. Select. Topics Quantum Electron., vol. 8, no. 2, pp. 278-283, Mar./Apr. 2002.
18. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. New York: Oxford Univ. Press, 1988, ch. 1.
19. M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi, and J. M. Tsai, "Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer," J. Appl. Phys., vol. 94, pp. 1753-1757, 2003.
20. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, "Gain mechanism in GaN Schottky ulttaviolet detectors," Appl. Phys. Lett., vol. 79, pp. 1417-1419, 2001.
21. 2-passivated lateral-geometry GaN transparent Schottky-barrier detectors," Appl. Phys. Lett., vol. 77, pp. 863-865, 2000.
22. J. C. Carrano, T. Li, P. A. Gradowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell, "Comprehensive characterization of metal-semi-conductor-metal ultraviolet photodetectors fabricated on single-crystal GaN," J. Appl. Phys., vol. 83, pp. 6148-6160, 1998.
23. Y. Z. Chiou, "GaN ultraviolet photodetectors with transparent titanium, tungsten and tungsten electrodes," J. Electrochem. Soc., vol. 152, pp. G639-G642, 2005.
24. E. Monroy, F. Calle, J. L. Pau, E. Munoz, and F. Omnes, "Low-noise metal-insulator-semiconductor UV photodiodes based on GaN," Electron. Lett., vol. 36, pp. 2096-2098, 2000.