Electron mobility in an AlGaN/GaN two-dimensional electron gas I - Carrier concentration dependent mobility

IEEE Transactions on Electron Devices

Volumn 50, Issue 10, 2003, Pages 2002-2008

  Katz, Oded ^a   Horn, Adi ^a   Bahir, G ^a   Salzman, Joseph ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

AlGaN; HFET; Magnetoresistance; Mobility

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON GAS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MAGNETORESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMAL EFFECTS;

ALUMINUM GALLIUM NITRIDE; COULOMB INTERACTION; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; INTERFACE ROUGHNESS; OPTICAL PHONON SCATTERING; TWO-DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 0141905933     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816103     Document Type: Article

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33. Room Temperature (300 K) Experimental Results are Similar to the 250 K Shown Data, but More Noisy Due to Instrumental Difficulties.