Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 16, 2009, Pages 2719-2724

  Chettah, A ^a   Kucal, H ^b   Wang, Z G ^b,c   Kac, M ^b,d   Meftah, A ^a   Toulemonde, M ^b  

^a UNIVERSITY OF SKIKDA   (Algeria)

^b UNIVERSITÉ DE CAEN   (France)

^c INSTITUTE OF MODERN PHYSICS   (China)

^d INSTITUTE OF NUCLEAR PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; CRYSTALLINE SI; CRYSTALLINE SILICONS; DIFFUSIVITIES; ELECTRON-PHONON COUPLING CONSTANT; ELECTRONIC ENERGY LOSS; ELECTRONIC EXCITATION; ION PATHS; METALLIC MULTILAYERS; MOLTEN PHASE; SENSITIVE MATERIALS; SWIFT HEAVY IONS; THERMAL SPIKE MODEL; THERMAL SPIKES;

CRYSTALLINE MATERIALS; ENERGY DISSIPATION; HEAVY IONS; MULTILAYERS; PHASE INTERFACES; PHONONS; QUENCHING;

SEMICONDUCTING SILICON;

EID: 68349146255     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.05.063     Document Type: Article

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