Latent track formation in silicon irradiated by 30 MeV fullerenes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 146, Issue 1-4, 1998, Pages 302-308

  Dunlop, A ^a   Jaskierowicz, G ^a   Della Negra, S ^b  

^a LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Electronic excitation; Fullerene; Latent track; Radiation damage; Silicon; Transmission electorn microscopy

Indexed keywords

CRYSTALLINE MATERIALS; FULLERENES; HEAVY IONS; ION BEAMS; RADIATION DAMAGE; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC EXCITATION; LATENT TRACK;

ION BOMBARDMENT;

EID: 0032477065     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00509-6     Document Type: Article

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