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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 174, Issue 4, 2001, Pages 491-498

Latent track formation in germanium irradiated with 20, 30 and 40 MeV fullerenes in the electronic regime

(8) Colder, A a Marty, O b Canut, B b Levalois, M a Marie, P a Portier, X a Ramos, S M M b Toulemonde, M c

a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux (France)

b UNIVERSITÉ LYON 1 (France)

c Centre Interdisciplinaire de Recherche Ions Lasers (France)

Author keywords

Fullerene; Germanium; Irradiation; Microscopy; Track

Indexed keywords

AMORPHOUS MATERIALS; FULLERENES; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BOMBARDMENT; PARTICLE BEAMS; RECRYSTALLIZATION (METALLURGY); SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS LATENT TRACKS;

SEMICONDUCTING GERMANIUM;

EID: 0035341891 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00314-7 Document Type: Article

Times cited : (52)

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