Nanoporous SiO2/Si thin layers produced by ion track etching: Dependence on the ion energy and criterion for etchability

Journal of Applied Physics

Volumn 104, Issue 2, 2008, Pages

  Dallanora, A ^a   Marcondes, T L ^b   Bermudez, G G ^c   Fichtner, P F P ^b   Trautmann, C ^d   Toulemonde, M ^e   Papaleo R M ^a  

^a PONTIFICAL CATHOLIC UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^c LABORATORIO TANDAR   (Argentina)

^d GSI HELMHOLTZZENTRUM FÜR SCHWERIONENFORSCHUNG GMBH   (Germany)

^e UNIVERSITÉ DE CAEN   (France)

Author keywords

[No Author keywords available]

Indexed keywords

NANO-POROUS;

SILICON COMPOUNDS;

EID: 48849105533     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2957052     Document Type: Article

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