Ion and electron track-structure and its effects in silicon: Model and calculations

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 227, Issue 3, 2005, Pages 319-336

  Akkerman, A ^a   Barak, J ^a   Emfietzoglou, D ^b  

^a SOREQ NUCLEAR RESEARCH CENTER   (Israel)

^b UNIVERSITY OF IOANNINA   (Greece)

Author keywords

Dielectric response theory; Inelastic electron and ion scattering; Ion induced prompt electric field; Radial dose distribution

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; ELECTRON SCATTERING; ELECTRONIC STRUCTURE; ENERGY ABSORPTION; ION BEAMS; IONIZATION; MONTE CARLO METHODS;

DIELECTRIC RESPONSE THEORY; INELASTIC ELECTRON AND ION SCATTERING; ION INDUCED PROMPT ELECTRIC FIELD; RADIAL DOSE DISTRIBUTION;

SILICON;

EID: 10044266577     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.08.020     Document Type: Article

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