Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 146, Issue 1-4, 1998, Pages 296-301

  Canut, B ^a   Bonardi, N ^a   Ramos, S M M ^a   Della Negra, S ^b  

^a UNIVERSITÉ LYON 1   (France)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

Cluster; Irradiation; Latent track; Silicon

Indexed keywords

CRYSTAL ORIENTATION; ELECTRON ENERGY LEVELS; FULLERENES; HEAVY IONS; SILICON; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

ION IRRADIATION; LATENT TRACK;

ION BOMBARDMENT;

EID: 0032476999     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00512-6     Document Type: Article

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