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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 1919-1925

Chemical effect of dry and wet cleaning of the Ru protective layer of the extreme ultraviolet lithography reflector

(5) Belau, Leonid a Park, Jeong Y b Liang, Ted c Seo, Hyungtak a Somorjai, Gabor A a,b

a UNIVERSITY OF CALIFORNIA (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

c INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL EFFECT; CHEMICAL INTERACTIONS; CLEANING PROCESS; CORROSIVE GAS; DRY AND WET; EXTREME ULTRAVIOLET REFLECTORS; LIQUID PHASE; MOLECULAR MECHANISM; OXIDATION STATE; OXYGEN PLASMAS; OZONATED WATER; PROTECTIVE LAYERS; REFLECTOR SURFACES; RU CAPPING LAYERS; SIGNIFICANT SURFACES; SURFACE ETCHING; SURFACE STUDY; UV/OZONE TREATMENT; WET CHEMICAL TREATMENT;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL CLEANING; DRY CLEANING; ETCHING; HYDROGEN; HYDROGEN PEROXIDE; ODOR CONTROL; OXIDATION; OXYGEN; PLASMAS; REFLECTION; SCANNING ELECTRON MICROSCOPY; SULFURIC ACID; SURFACE CLEANING; ULTRAVIOLET DEVICES; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE MORPHOLOGY;

EID: 68349138149 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3167368 Document Type: Article

Times cited : (28)

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